2sc5347a no. a1087-1/8 features ? high-frequency medium output ampli cation (v ce =5v, i c =50ma) : f t =4.7ghz typ (f=1ghz) : ? s21e ? 2 =8db typ (f=1ghz) : nf=1.8db typ (f=1ghz) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 12 v emitter-to-base voltage v ebo 2v collector current i c 150 ma collector dissipation p c when mounted on ceramic substrate (900mm 2 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7007b-004 ordering number : ena1087a 90512 tkim/d0308ab msim tc-00001778 sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collector 3 : emitter sanyo : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sc5347ae-td-e 2SC5347AF-TD-E cz lot no. rank 2 3 1 2sc5347a npn epitaxial planar silicon transistor high-frequency semi-power output stage, low-noise medium output ampli er applications
2sc5347a no. a1087-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 1.0 a emitter cutoff current i ebo v eb =1v, i c =0a 10 a dc current gain h fe v ce =5v, i c =50ma 60* 270* gain-bandwidth product f t v ce =5v, i c =50ma 3 4.7 ghz output capacitance cob v cb =10v, f=1mhz 1.3 2.0 pf reverse transfer capacitance cre 0.9 pf forward transfer gain ? s21e ? 2 v ce =5v, i c =50ma, f=1ghz 6 8 db noise figure nf v ce =5v, i c =50ma, f=1ghz 1.8 3.0 db * : the 2sc5347a is classi ed by 50ma h fe as follows : rank d e f h fe 60 to 120 90 to 180 135 to 270 ordering information device package shipping memo 2sc5347ae-td-e pcp 1,000pcs./reel pb free 2SC5347AF-TD-E pcp 1,000pcs./reel
2sc5347a no. a1087-3/8 collector current, i c -- ma noise figure, nf -- db nf -- i c ? s21e ? 2 -- i c collector current, i c -- ma forward transfer gain, ? s21e ? 2 -- db collector dissipation, p c -- w p c -- ta ambient temperature, ta -- c itr08161 0 12 10 8 6 4 2 0 12 10 8 6 4 2 1.0 23 57 23 3 57 10 100 2 1.0 23 57 23 23 57 7 10 100 itr08162 0 20 40 60 80 100 120 140 160 0 0.4 0.2 0.6 0.8 1.0 1.2 1.3 1.4 itr08163 v ce =5v f=1ghz v ce =5v f=1ghz when mounted on ceramic substrate (900mm 2 ? 0.8mm) cre -- v cb collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf itr08159 f=1mhz itr08160 f=1mhz 3 1.0 10 35 2 0.1 7 35 2 7 72 3 5 3 2 1.0 7 3 5 2 0.1 7 72 10 1.0 0.1 2 3 5 5 7 2 3 1.0 0.1 2 3 5 2 3 5 7 f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- ghz itr08158 23 57 7 10 23 23 57 100 1.0 1.0 0.1 5 7 3 2 10 5 7 3 2 v ce =5v h fe -- i c collector current, i c -- ma dc current gain, h fe collector-to-emitter voltage, v ce -- v i c -- v ce collector current, i c -- ma 5 5 7 100 2 3 1.0 23 57 23 57 2 3 10 100 it14231 v ce =5v 160 140 120 100 80 60 40 20 0 024 810 6 it14230 i b =0 a 100 a 200 a 300 a 400 a 500 a 600 a 700 a 800 a 900 a 1000 a
2sc5347a no. a1087-4/8 s parameter s11e f=100mhz to 1200mhz(100mhz step) s21e f=100mhz to 1200mhz(100mhz step) s12e f=100mhz to 1200mhz(100mhz step) s22e f=100mhz to 1200mhz(100mhz step) j50 j25 j10 0 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 90 120 150 180 --150 --120 --90 --30 --60 0 60 30 16 20 12 8 4 90 120 150 180 --150 --120 --90 --30 --60 0 60 30 0.04 0.08 0.16 0.12 0.2 j50 j25 j10 0 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 itr08164 itr08165 itr08166 itr08167 10 150 250 500 25 50 100 150 250 500 50 100 10 25 0.1ghz v ce =5v i c =20ma v ce =8v i c =70ma v ce =5v i c =50ma 1.2ghz v ce =5v i c =50ma v ce =8v i c =70ma v ce =5v i c =20ma v ce =5v i c =50ma v ce =8v i c =70ma v ce =5v i c =20ma v ce =8v i c =70ma v ce =5v i c =20ma 0.1ghz 0.1ghz 1.2ghz 0.1ghz 1.2ghz v ce =5v i c =50ma 1.2ghz
2sc5347a no. a1087-5/8 s parameters (common emitter) v ce =5v, i c =50ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.358 -141.0 24.005 105.9 0.027 68.4 0.342 -63.0 200 0.354 -165.7 12.593 93.3 0.047 72.7 0.205 -68.4 300 0.355 -176.8 8.532 86.8 0.068 74.1 0.166 -69.7 400 0.359 174.9 6.428 81.9 0.089 73.7 0.149 -72.3 500 0.359 169.3 5.293 77.6 0.110 72.8 0.145 -75.3 600 0.362 163.9 4.360 73.5 0.130 71.7 0.143 -78.6 700 0.366 158.5 3.774 69.9 0.151 70.2 0.147 -82.1 800 0.364 153.5 3.334 66.4 0.171 68.6 0.151 -85.6 900 0.368 149.8 2.995 62.9 0.191 66.7 0.158 -90.1 1000 0.370 145.3 2.725 59.4 0.210 65.1 0.166 -92.3 1100 0.373 141.5 2.494 56.5 0.230 63.0 0.170 -95.1 1200 0.377 137.6 2.307 53.0 0.248 61.4 0.177 -97.8 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.445 -115.4 21.095 113.8 0.032 59.7 0.479 -52.4 200 0.400 -149.6 11.567 97.4 0.049 63.4 0.300 -58.0 300 0.394 -165.7 7.917 89.3 0.066 67.0 0.242 -58.8 400 0.391 -176.5 5.974 82.5 0.085 68.5 0.214 -60.0 500 0.391 176.7 4.845 78.4 0.103 68.8 0.203 -62.2 600 0.392 169.4 4.065 73.9 0.122 68.6 0.199 -64.7 700 0.393 163.8 3.522 70.0 0.141 67.8 0.198 -67.9 800 0.394 158.4 3.114 66.4 0.159 67.1 0.201 -71.2 900 0.396 154.1 2.798 62.5 0.178 65.7 0.204 -74.7 1000 0.399 149.3 2.548 58.9 0.196 64.5 0.212 -78.1 1100 0.403 144.9 2.333 55.5 0.215 62.9 0.218 -81.4 1200 0.408 141.0 2.158 51.8 0.233 61.8 0.224 -84.1 v ce =8v, i c =70ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.328 -141.2 25.505 105.1 0.024 70.5 0.348 -50.8 200 0.323 -165.7 13.334 93.0 0.043 75.0 0.233 -48.9 300 0.323 -176.6 9.025 86.7 0.062 75.8 0.204 -47.0 400 0.326 175.1 6.819 81.8 0.081 75.5 0.191 -48.0 500 0.325 169.5 5.481 77.8 0.100 74.5 0.187 -50.5 600 0.328 163.6 4.612 73.7 0.119 73.4 0.185 -53.6 700 0.330 158.4 3.980 70.2 0.139 71.8 0.188 -57.3 800 0.333 153.5 3.524 66.7 0.157 70.4 0.191 -60.9 900 0.335 150.0 3.148 63.3 0.177 68.5 0.198 -65.1 1000 0.341 144.7 2.866 60.0 0.194 67.1 0.204 -69.0 1100 0.345 141.2 2.629 57.0 0.213 65.1 0.208 -72.1 1200 0.348 138.0 2.424 53.4 0.230 62.6 0.215 -75.3
2sc5347a no. a1087-6/8 embossed taping speci cation 2sc5347ae-td-e, 2SC5347AF-TD-E
2sc5347a no. a1087-7/8 outline drawing land pattern example 2sc5347ae-td-e, 2SC5347AF-TD-E mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
2sc5347a ps no. a1087-8/8 this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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